Perovskite Light-Emitting Devices with Doped Hole Transporting Layer

Perovskite quantum dots (PQDs) have drawn global attention in recent years and have been used in a range of semiconductor devices, especially for light-emitting diodes (LEDs). However, because of the nature of low-conductive ligands of PQDs and surface and bulk defects in the devices, charge injection and transport should be carefully managed in order to maximize the electroluminescent performances. In this study, we employed three p-dopants, i.e., 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), 1,3,4,5,7,8-hexafluoro-11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (F6-TCNNQ), and 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TCNH14), respectively doped into the commonly used hole transporting layer (HTL) poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). Compared with the devices with the neat PTAA, those with the doped PTAA as the HTLs achieved the improved electroluminescent performances. In particular, the device with the strong oxidant F4-TCNQ exhibited an improvement factor of 27% in the peak external quantum efficiency compared with the control device with the neat PTAA. The capacitance and transient electroluminescent measurements were carried out to identify the imperceptible interactions in the doped HTL and at the interface between the HTL and PQDs.     

Si杂质扩散诱导InGaAs/AlGaAs量子阱混杂的研究（英文）

光学灾变损伤(COD)常发生于量子阱半导体激光器的前腔面处,极大地影响了激光器的出光功率及寿命。通过杂质诱导量子阱混杂技术使腔面区波长蓝移来制备非吸收窗口是抑制腔面COD的有效手段,也是一种高效率、低成本方法。本文选择了Si杂质作为量子阱混杂的诱导源,使用金属有机化学气相沉积设备生长了InGaAs/AlGaAs量子阱半导体激光器外延结构、Si杂质扩散层及Si 3 N 4保护层。热退火处理后,Si杂质扩散诱导量子阱区和垒区材料互扩散,量子阱禁带变宽,输出波长发生蓝移。退火会影响外延片的表面形貌,而表面形貌则可能会影响后续封装工艺中电极的制备。结合光学显微镜及光致发光谱的测试结果,得到825℃/2 h退火条件下约93 nm的最大波长蓝移量,也证明退火对表面形貌的改变,不会影响波长蓝移效果及后续电极工艺。     

Multifunctional Materials Serving as Efficient Non-Doped Violet-Blue Emitters and Host Materials for Phosphorescence

Efficient multifunctional materials acting as violet-blue emitters, as well as host materials for phosphorescent OLEDs, are crucial but rare due to demand that they should have high first singlet state (S₁) energy and first triplet state (T₁) energy simultaneously. In this study, two new violet-blue bipolar fluorophores, TPA-PI-SBF and SBF-PI-SBF , were designed and synthesized by introducing the hole transporting moiety triphenylamine (TPA) and spirobifluorene (SBF) unit that has high T₁ into high deep blue emission quantum yield group phenanthroimidazole (PI). As the results, the non-doped OLEDs based on TPA-PI-SBF exhibited excellent EL performance with a maximum external quantum efficiency (EQE_max) of 6.76 % and a violet-blue emission with Commission Internationale de L′Eclairage (CIE) of (0.152, 0.059). The device based on SBF-PI-SBF displayed EQE_max of 6.19 % with CIE of (0.159, 0.049), which nearly matches the CIE coordinates of the violet-blue emitters standard of (0.131, 0.046). These EL performances are comparable to the best reported non-doped deep or violet-blue emissive OLEDs with CIEy<0.06 in recent years. Additionally, the green, yellow and red phosphorescent OLEDs with TPA-PI-SBF and SBF-PI-SBF as host materials achieved a high EQE_max of about 20 % and low efficiency roll-off at the ultra-high luminance of 10 000 cd m⁻². These results provided a new construction strategy for designing high-performance violet-blue emitters, as well as efficient host materials for phosphorescent OLEDs.     

Large-area fabrication: The next target of perovskite light-emitting diodes

Perovskite materials show exciting potential for light-emitting diodes (LEDs) owing to their intrinsically high photoluminescence efficiency and color purity. The research focusing on perovskite light-emitting diodes (PeLEDs) has experienced an exponential growth in the past six years. The maximum external quantum efficiency of red, green, and blue PeLEDs has surpassed 20%, 20%, and 10%, respectively. Nevertheless, the current PeLEDs are still in the laboratory stage, and the key for further development of PeLEDs is large-area fabrication. In this paper, we briefly discuss the similarities and differences between manufacturing high-quality and large-area PeLEDs and perovskite solar cells. Especially, the general technologies for fabricating large-area perovskite films are also introduced. The effect of charge transport layers and electrodes on large-area devices are discussed as well. Most importantly, we summarize the advances of large-area (active area ≥ 30 mm²) PeLEDs reported since 2017, and describe the methods for optimizing large-area PeLEDs reported in the literature. Finally, the development perspective of PeLEDs is presented for the goal of highly efficient and large-area PeLED fabrication. It is of great significance for the application of PeLEDs in future display and lighting.     

A Series of Dibenzofuran-Based n-Type Exciplex Host Partners Realizing High-Efficiency and Stable Deep-Red Phosphorescent OLEDs

Deep-red to near-infrared (NIR) OLEDs, which yield emission peak wavelengths beyond λ=660 nm, are applicable as unique light sources in plant growth or health monitoring systems. Compared with other visible-spectrum OLEDs, however, research in the field of deep-red OLEDs is not as advanced. In this work, three new types of dibenzofuran-based host materials are developed as n-type exciplex host partners. Combining these with the deep-red iridium complex bis(2,3-diphenylquinoxaline)iridium(dipivaloylmethane) ([(DPQ)₂Ir(dpm)]) and N,N′-di(naphalene-1-yl)-N,N′-diphenylbenzidine (α-NPD) as a p-type exciplex host partner, a highly efficient deep-red OLED can be realized with a maximum external quantum efficiency (η_ext,max) of over 16 % with Comission Internationale de l′Éclairge (CIE) coordinates of (0.71, 0.28). In addition, the effect of the doping concentration and the p/n ratio of the exciplex host on the efficiency and the lifetime of the OLEDs are investigated. Consequently, the optimized device exhibits a η_ext,max of over 15 % and a six-time longer lifetime operating at high brightness of 100 cd m⁻² compared with other state-of-the-art deep-red OLEDs.     

利用银纳米立方增强效率的多层溶液加工白光有机发光二极管

金属纳米粒子的局域表面等离子体共振效应常被用于增强有机发光二极管中激子辐射强度,其增强效果与金属纳米粒子的共振波长、共振强度及其与激子之间的耦合密切相关.本文将具有较强局域表面等离子体共振效应的银纳米立方引入多层溶液加工白光有机发光二极管中提升器件性能.在传统的溶液加工有机发光二极管中,发光层主体一般具有较强的空穴传输性,因此激子主要在发光层/电子传输层界面附近复合.本文将银纳米立方掺入电子传输层中,使银纳米立方与激子之间产生充分的耦合作用,提高激子发光强度.对银纳米立方包裹二氧化硅外壳,一方面优化纳米立方与激子之间的距离,另一方面减小其对器件中电荷传输的影响.通过优化银纳米立方的浓度,多层溶液加工白光有机发光二极管的电流效率达到30.0 cd/A,是基础器件效率的2倍.另外,由于银纳米立方的等离子体共振光谱较宽,同时增强了白光中蓝光和黄光的强度,因此引入银纳米立方基本没有影响白光的色度.研究结果表明引入金属纳米粒子是提升多层溶液加工发光二极管性能的有效方法.     

Synthesis of fluorene‐based hyperbranched polymers for solution‐processable blue,green, red,and white light‐emitting devices

For the purpose of making hyperbranched polymer (Hb‐Ps)‐based red, green, blue, and white polymer light‐emitting diodes (PLEDs), three Hb‐Ps Hb‐ terfluorene ( Hb‐TF ), Hb ‐4,7‐bis(9,9′‐dioctylfluoren‐2‐yl)‐2,1,3‐benzothiodiazole ( Hb‐BFBT ), and Hb‐ 4,7‐bis[(9,9′‐dioctylfluoren‐2‐yl)‐thien‐2‐yl]‐2,1,3‐benzothiodiazole ( Hb‐BFTBT ) were synthesized via [2+2+2] polycyclotrimerization of the corresponding diacetylene‐functionalized monomers. All the synthesized polymers showed excellent thermal stability with degradation temperature higher than 355 °C and glass transition temperatures higher than 50 °C. Photoluminance (PL) and electroluminance (EL) spectra of the polymers indicate that Hb‐TF , Hb‐BFBT , and Hb‐BFTBT are blue‐green, green, and red emitting materials. Maximum brightness of the double‐layer devices of Hb‐TF , Hb‐BFBT , and Hb‐BFTBT with the device configuration of indium tin oxide/poly(3,4‐ethylene dioxythiophene):poly(styrene sulfonate)/light‐emitting polymer/CsF/Al are 48, 42, and 29 cd/m²; the maximum luminance efficiency of the devices are 0.01, 0.02, and 0.01 cd/A. By using host–guest doped system, saturated red electrophosphorescent devices with a maximum luminance efficiency of 1.61 cd/A were obtained when Hb‐TF was used as a host material doped with Os(fptz)₂(PPh₂Me₂)₂ as a guest material. A maximum luminance efficiency of 3.39 cd/A of a red polymer light‐emitting device was also reached when Hb‐BFTBT was used as the guest in the PFO (Poly(9,9‐dioctylfluorene)) host layer. In addition, a series of efficient white devices were, which show low turn‐on voltage (3.5 V) with highest luminance efficiency of 4.98 cd/A, maximum brightness of 1185 cd/m², and the Commission Internationale de l'Eclairage (CIE) coordinates close to ideal white emission (0.33, 0.33), were prepared by using BFBT as auxiliary dopant. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Cascade hole transport in efficient green phosphorescent light‐emitting devices achieved by layer‐by‐layer solution deposition using photocrosslinkable‐conjugated polymers containing oxetane side‐chain moieties

A hole‐injection/transport bilayer structure on an indium tin oxide (ITO) layer was fabricated using two photocrosslinkable polymers with different molecular energy levels. Two photoreactive polymers were synthesized using 2,7‐(or 3,6‐)‐dibromo‐9‐(6‐((3‐methyloxetan‐3‐yl)methoxy)hexyl)‐9H‐carbazole) and 2,4‐dimethyl‐N,N‐bis(4‐ (4,4,5,5‐tetramethyl‐1,3,2‐dioxaborolan‐2‐yl)phenyl)aniline via a Suzuki coupling reaction. When the oxetane groups were photopolymerized in the presence of a cationic photoinitiator, the photocured film showed good solvent resistance and compatibility with a poly(N‐vinylcarbazole) (PVK)‐based emitting layer. Without the use of a conventional hole injection layer (HIL) of poly(3,4‐ethylenedioxythiophene)/(polystyrenesulfonate) (PEDOT:PSS), the resulting green light‐emitting device bearing PVK: 5‐4‐tert‐butylphenyl‐1,3,4‐oxadiazole (PBD):Ir(Cz‐ppy)3 exhibited a maximum external quantum efficiency of 9.69%; this corresponds to a luminous efficiency of 29.57 cd/A for the device K‐4 configuration ITO/POx‐I/POx‐II/PVK:PBD:Ir(Cz‐ppy)3/triazole/Alq3/LiF/Al. These values are much higher than those of PLEDs using conventional PEDOT:PSS as a single HIL. The significant improvement in device efficiency is the result of suppression of the hole injection/transport properties through double‐layered photocrosslinked‐conjugated polymers. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Synthesis and characterization of electrophosphorescent jacketed conjugated polymers

A monomer containing bent side chains with oxadiazole unit was synthesized. And it was copolymerized with polyfluorene at different ratios. The photophysical and electrochemical properties of the copolymers were characterized. The results show that the introduction of the oxidiazole‐containing side chains into the polymer reduces the lowest unoccupied molecular orbital level. And the steric hindrance of the side groups can effectively suppress the aggregation of the polymer backbones. Electroluminescent devices were fabricated with a configuration of indium tin oxide (ITO)/poly(3,4‐ethylenedioxythiophene (PEDOT):PSS/Sample/Ca/Al. All of the devices emit blue light. The device of the copolymer PFOXD50 shows the best performance with the maximum luminance of 1033 cd/m² and the maximum current efficiency of 0.29 cd/A. Then a cyclometalated iridium complex monomer (ppy)₂Ir(BrPhPyBr) was copolymerized with PFOXD50 at different ratios. The devices with the same configuration emit orange light. The efficiency generally increases with the increasing Ir content. Among them, the device of the copolymer PFOXDIr7 shows the best performance with the maximum luminance of 846 cd/m² and the maximum current efficiency of 0.61 cd/A. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

发光二极管特性的实验研究

通过实验,对红、绿、蓝三种颜色的LED的发光稳定性、伏安特性和发光波长进行了研究。采用开启电压测量法和分光计测量法,研究了LED的发射波长,实验显示两种方法的结果是相符合的,说明开启电压法是可行的。